Domain wall acceleration by ultrafast field application

  • Optimizing ferroelectrics for contemporary high-frequency applications asks for the fundamental understanding of ferroelectric switching and domain wall (DW) motion in ultrafast field pulses while the microscopic understanding of the latter is so far incomplete. To close this gap in knowledge, ab initio-based molecular dynamics simulations are utilized to analyze the dynamics of 180° DWs in the prototypical ferroelectric material \(BaTiO_{3}\). How ultrafast field application initially excites the dipoles in the system and how they relax to their steady state via transient negative capacitance are discussed. Excitingly, a giant boost of the DW velocity related to the nonequilibrium switching of local dipoles acting as nucleation centers for the wall movement is found. This boost may allow to tune the local ferroelectric switching rate by the shape of an applied field pulse.

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Metadaten
Author:Ruben KhachaturyanORCiDGND, Aris DimouGND, Anna GrünebohmORCiDGND
URN:urn:nbn:de:hbz:294-90929
DOI:https://doi.org/10.1002/pssr.202200038
Parent Title (English):Physica status solidi - rapid research letters
Subtitle (German):an ab initio‐based molecular dynamics study
Publisher:Wiley-VCH
Place of publication:Weinheim
Document Type:Article
Language:English
Date of Publication (online):2022/07/01
Date of first Publication:2022/03/22
Publishing Institution:Ruhr-Universität Bochum, Universitätsbibliothek
Tag:ferroelectric domain walls; functional oxides; ultrafast switching
Volume:16
Issue:6, Article 2200038
First Page:2200038-1
Last Page:2200038-6
Institutes/Facilities:Interdisciplinary Centre for Advanced Materials Simulation (ICAMS)
Dewey Decimal Classification:Technik, Medizin, angewandte Wissenschaften / Ingenieurwissenschaften, Maschinenbau
open_access (DINI-Set):open_access
Licence (English):License LogoCreative Commons - CC BY-NC 4.0 - Attribution-NonCommercial 4.0 International