Group-III Nitrides
- Group-III nitrides are wide band gap semiconductors. They find application in the field of optoelectronics. The present work deals with various aspects of chemistry and materials synthesis of group-III nitrides, particularly GaN. The precursor chemistry of group-III nitrides focuses on the synthesis of group-III metal amides. MOCVD of group-III metal amides gave group-III nitride thin films. GaN nanostructures, e.g. nanopillars, nanorods and nanowires, were deposited using Bisazido(diethylaminopropyl)gallium \([(N_{3})_{2}Ga(CH_{2})_{3}NEt_{2}]\) as single molecule precursor. A set of quantitative CVD data, such as temperature distribution, mass flow of precursor and growth rate of GaN was generated to understand the MOCVD of group-III nitrides using single molecule precursor bisazido(dimethylaminopropyl)gallium \([(N_{3})_{2}Ga(CH_{2})_{3}NMe_{2}]\) in a vertical test reactor.
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| Author: | Jayaprakash KhanderiGND |
|---|---|
| URN: | urn:nbn:de:hbz:294-15949 |
| Subtitle (English): | contribution to precusor chemistry, MOCVD, nanostructures and multiscale simulation studies |
| Referee: | Roland A. FischerGND, Martin MuhlerORCiDGND, William S. SheldrickGND |
| Document Type: | Doctoral Thesis |
| Language: | English |
| Date of Publication (online): | 2006/05/11 |
| Date of first Publication: | 2006/05/11 |
| Publishing Institution: | Ruhr-Universität Bochum, Universitätsbibliothek |
| Granting Institution: | Ruhr-Universität Bochum, Fakultät für Chemie und Biochemie |
| Date of final exam: | 2006/02/28 |
| Creating Corporation: | Fakultät für Chemie und Biochemie |
| GND-Keyword: | Nitride; Gallium; MOCVD-Verfahren; Nanostruktur; CVD-Verfahren |
| Institutes/Facilities: | Lehrstuhl für Anorganische Chemie II, Organometallics & Materials Chemistry |
| Dewey Decimal Classification: | Naturwissenschaften und Mathematik / Chemie, Kristallographie, Mineralogie |
| faculties: | Fakultät für Chemie und Biochemie |
| Licence (German): |  Keine Creative Commons Lizenz - es gelten der Veröffentlichungsvertrag und das deutsche Urheberrecht |
